STEM nanoanalysis of Au/Pt/Ti-Si<sub>3</sub>N<sub>4 </sub>interfacial defects and reactions during local stress of SiGe HBTs
<p>Abstract</p> <p>A new insight on the behavior of metal contact-insulating interfaces in SiGe heterojunction bipolar transistor is given by high-performance aberration-corrected scanning transmission electron microscopy (STEM) analysis tools equipped with sub-nanometric probe siz...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
SpringerOpen
2011-01-01
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Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://www.nanoscalereslett.com/content/6/1/574 |