Wireless Control of Active Gate Drivers for Silicon Carbide Power MOSFETs

Wireless Control of Active Gate Drivers for Silicon Carbide Power MOSFETs

Active gate drivers (AGDs) enhance the controllability and monitoring of switching devices, especially for fast switching silicon carbide (SiC) power metal&#x2013;oxide&#x2013;semiconductor field-effect transistors (<sc>mosfet</sc>s). To support information flow between gate driv...

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Bibliografiske detaljer
Main Authors: Daniel A. Philipps, Dimosthenis Peftitsis
Format: Article
Sprog:English
Udgivet: IEEE 2023-01-01
Serier:IEEE Open Journal of the Industrial Electronics Society
Fag:
Active gate driving
Bluetooth low energy (BLE)
control
<sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">mosfet</sc>
silicon carbide (SiC)
wireless
Online adgang:https://ieeexplore.ieee.org/document/10288413/

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https://ieeexplore.ieee.org/document/10288413/

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