Oxide Semiconductor Memristor‐Based Optoelectronic Synaptic Devices With Quaternary Memory Storage

Oxide Semiconductor Memristor‐Based Optoelectronic Synaptic Devices With Quaternary Memory Storage

Abstract A pioneering integration of oxide semiconductor memristors with optoelectronic features is presented, surpassing binary limitations to realize multi‐valued synaptic operations. Through Pt/Ga2O3/Pt memristors, their structural and electronic attributes via atomic force microscopy, X‐ray diff...

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Bibliographic Details
Main Authors: Jeong‐Hyeon Kim, Hye Jin Lee, Hee‐Jin Kim, Jongyun Choi, Jae‐Hyeok Oh, Dae‐Choul Choi, Jisu Byun, Seung‐Eon Ahn, Sung‐Nam Lee
Format: Article
Language:English
Published: Wiley-VCH 2024-07-01
Series:Advanced Electronic Materials
Subjects:
Ga2O3
memristor, optoelectronic synapse
quaternary
Online Access:https://doi.org/10.1002/aelm.202300863

Internet

https://doi.org/10.1002/aelm.202300863

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