Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
High-dielectric constant (k) materials have attracted a lot of attention for use as gate insulators (GIs) that enable low-voltage operation of thin film transistors (TFTs). However, high-k GIs also induce severe degradation in TFT characteristics, such as effective mobility (μeff). Therefore, in thi...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5126151 |