Research of Electrophysical Properties of Thin Gate Dielectrics Obtained by Rapid Thermal Processing Method

Research of Electrophysical Properties of Thin Gate Dielectrics Obtained by Rapid Thermal Processing Method

Researches of the electrophysical characteristics of gate dielectrics obtained by the rapid thermal processing (RTP) method by two-stage and three-stage processes have been carried out. Each photonic processing (stage) was carried out for 12 s at a constant power of halogen lamps and heating the waf...

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Bibliographic Details
Main Authors: N. S. Kovalchuk, A. A. Omelchenko, V. A. Pilipenko, V. A. Solodukha, S. V. Demidovich, V. V. Kolos, V. A. Filipenia, D. V. Shestovski
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2022-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
rapid thermal processing method
gate dielectric
three-stage process
flat zone voltage
dielectric strength
breakdown voltage
nitrogen concentration
Online Access:https://doklady.bsuir.by/jour/article/view/3388

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https://doklady.bsuir.by/jour/article/view/3388

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