Vacancy complexes in Cd3As2
Epitaxial growth of the three-dimensional topological semimetal Cd3As2 on semiconductor substrates enables its use and integration in device applications. Epitaxy also provides an avenue for varying and controlling point defects through modification of the chemical potential during growth. In turn,...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-06-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0146429 |