Vacancy complexes in Cd3As2

Vacancy complexes in Cd3As2

Epitaxial growth of the three-dimensional topological semimetal Cd3As2 on semiconductor substrates enables its use and integration in device applications. Epitaxy also provides an avenue for varying and controlling point defects through modification of the chemical potential during growth. In turn,...

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Bibliographic Details
Main Authors:	A. D. Rice, M. O. Liedke, M. Butterling, E. Hirschmann, A. Wagner, N. M. Haegel, K. Alberi
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2023-06-01
Series:	APL Materials
Online Access:	http://dx.doi.org/10.1063/5.0146429

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