Loss optimization method for bottom IGBT in half bridge sub-module of high voltage and large capacity hybrid MMC
Power losses on the upper and bottom insulated gate bipolar transistors (IGBTs) in half bridge sub-modules (HBSMs) are uneven when hybrid modular multilevel converters (MMCs) work as inverters. The loss of the bottom IGBT in HBSM is much higher than any other device, which results in the high therma...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Department of Electric Power Engineering Technology
2024-03-01
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| Series: | 电力工程技术 |
| Subjects: | |
| Online Access: | https://www.epet-info.com/dlgcjsen/article/abstract/230413408 |