A TaO<sub>x</sub>-Based RRAM with Improved Uniformity and Excellent Analog Characteristics by Local Dopant Engineering
Resistive random-access memory (RRAM) with the ability to store and process information has been considered to be one of the most promising emerging devices to emulate synaptic behavior and accelerate the computation of intelligent algorithms. However, variation and limited resistance levels impede...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-10-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/20/2451 |