Influence of Displacement Damage Effect on AlGaN/GaN HEMT Devices
AlGaN/GaN high electron mobility transistors (HEMTs) have excellent physical and chemical stability, which gives it great potential for use in consumer, industrial and space applications. However, the defects of epitaxial growth AlGaN/GaN HEMTs are difficult to completely remove, and high-density de...
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| 格式: | 文件 |
| 语言: | English |
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Editorial Board of Atomic Energy Science and Technology
2023-12-01
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| 丛编: | Yuanzineng kexue jishu |
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