Influence of the Arsenic Pressure during Rapid Overgrowth of InAs/GaAs Quantum Dots on Their Photoluminescence Properties

Influence of the Arsenic Pressure during Rapid Overgrowth of InAs/GaAs Quantum Dots on Their Photoluminescence Properties

In this paper, for the first time, we report a strong effect of the arsenic pressure used for the high-rate GaAs capping of self-assembled InAs quantum dots on their optical properties. A 140 nm red shift of the photoluminescence peak position is observed when the overgrowth arsenic pressure increas...

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Bibliographic Details
Main Authors: Sergey Balakirev, Danil Kirichenko, Natalia Chernenko, Nikita Shandyba, Sergey Komarov, Anna Dragunova, Natalia Kryzhanovskaya, Alexey Zhukov, Maxim Solodovnik
Format: Article
Language:English
Published: MDPI AG 2023-09-01
Series:Crystals
Subjects:
molecular beam epitaxy
InAs
GaAs
quantum dots
overgrowth
photoluminescence
Online Access:https://www.mdpi.com/2073-4352/13/9/1358

Internet

https://www.mdpi.com/2073-4352/13/9/1358

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