Balanced InP/InGaAs Photodiodes With 1.5-W Output Power

Balanced InP/InGaAs Photodiodes With 1.5-W Output Power

We report InP/InGaAs modified unitraveling-carrier balanced photodiodes (PDs). The back-illuminated PDs were flip-chip bonded on diamond submounts for enhanced heat sinking. The device demonstrated a 3-dB bandwidth of 8 GHz and a 30-dB common-mode rejection ratio at frequencies of <; 10 GHz....

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Bibliographic Details
Main Authors: Qiugui Zhou, Allen S. Cross, Yang Fu, Andreas Beling, Brian M. Foley, Patrick Hopkins, J. C. Campbell
Format: Article
Language:English
Published: IEEE 2013-01-01
Series:IEEE Photonics Journal
Subjects:
Photodiodes
photodetector
Online Access:https://ieeexplore.ieee.org/document/6515609/

Internet

https://ieeexplore.ieee.org/document/6515609/

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