Influence of growth temperature and miscut angle of m-plane sapphire substrate on the semi-polar (11–22) AlN film grown by HVPE
The high-quality semi-polar (11-22) AlN thin films were grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE). The surface morphology and crystalline quality of the AlN film were greatly influenced by the growth temperature and the substrate miscut angle. As the temperature incr...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Frontiers Media S.A.
2022-11-01
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| Series: | Frontiers in Physics |
| Subjects: | |
| Online Access: | https://www.frontiersin.org/articles/10.3389/fphy.2022.1076895/full |