Investigation of Nano-Heat-Transfer Variability of AlGaN/GaN-Heterostructure-Based High-Electron-Mobility Transistors

Investigation of Nano-Heat-Transfer Variability of AlGaN/GaN-Heterostructure-Based High-Electron-Mobility Transistors

The aim of this work is to propose an electrothermal model for predicting the electron mobility, the effective thermal conductivity, and the operating temperature of AlGaN/GaN HEMT devices. The suggested model comprises an enhanced ballistic-diffusive model (BDE) coupled with a drift-diffusion model...

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Bibliographic Details
Main Authors: Haikel Mzoughi, Faouzi Nasri, Maha Almoneef, Sonia Soltani, Mohamed Mbarek, Amenallah Guizani
Format: Article
Language:English
Published: MDPI AG 2023-12-01
Series:Electronics
Subjects:
AlGaN–GaN HEMT
ballistic diffusive equation (BDE) model
non-Fourier heat transfer
finite-element method FEM
carrier electron mobility model
Online Access:https://www.mdpi.com/2079-9292/13/1/164

Internet

https://www.mdpi.com/2079-9292/13/1/164

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