Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors

Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors

Abstract Recent advances in fabricating field-effect transistors with MoS2 and other related two-dimensional (2D) semiconductors have inspired the industry to begin with the integration of these emerging technologies into FAB-compatible process flows. Just like in the lab research on 2D devices perf...

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Bibliographic Details
Main Authors: Yu. Yu. Illarionov, A. Karl, Q. Smets, B. Kaczer, T. Knobloch, L. Panarella, T. Schram, S. Brems, D. Cott, I. Asselberghs, T. Grasser
Format: Article
Language:English
Published: Nature Portfolio 2024-02-01
Series:npj 2D Materials and Applications
Online Access:https://doi.org/10.1038/s41699-024-00445-0

Internet

https://doi.org/10.1038/s41699-024-00445-0

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