Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers

Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers

GaN nanowires grown on metal substrates have attracted increasing interest for a wide range of applications. Herein, we report GaN nanowires grown by plasma-assisted molecular beam epitaxy on thin polycrystalline ZrN buffer layers, sputtered onto Si(111) substrates. The nanowire orientation was stud...

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Bibliographic Details
Main Authors: Karol Olszewski, Marta Sobanska, Vladimir G. Dubrovskii, Egor D. Leshchenko, Aleksandra Wierzbicka, Zbigniew R. Zytkiewicz
Format: Article
Language:English
Published: MDPI AG 2023-09-01
Series:Nanomaterials
Subjects:
GaN nanowires
ZrN buffer layers
molecular beam epitaxy
nanowire orientation
geometrical selection
Online Access:https://www.mdpi.com/2079-4991/13/18/2587

Internet

https://www.mdpi.com/2079-4991/13/18/2587

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