Boron activation in silicon thin films grown by PECVD under epitaxial and microcrystalline conditions
Boron doping level and boron activation in silicon thin films grown by PECVD under epitaxial (p+ epi‑Si) and microcrystalline (p+ µc-Si) conditions have been investigated as functions of the substrate material and annealing in the range of 200°C – 300°C. Hall effect measurements show that in the as-...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-12-01
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| Series: | Applied Surface Science Advances |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666523923001423 |