Boron activation in silicon thin films grown by PECVD under epitaxial and microcrystalline conditions

Boron activation in silicon thin films grown by PECVD under epitaxial and microcrystalline conditions

Boron doping level and boron activation in silicon thin films grown by PECVD under epitaxial (p+ epi‑Si) and microcrystalline (p+ µc-Si) conditions have been investigated as functions of the substrate material and annealing in the range of 200°C – 300°C. Hall effect measurements show that in the as-...

书目详细资料
Main Authors:	Antonio J. Olivares, A. Zamchiy, V.S. Nguyen, P. Roca i Cabarrocas
格式:	文件
语言:	English
出版:	Elsevier 2023-12-01
丛编:	Applied Surface Science Advances
主题:	Doping level Thin films Microcrystalline silicon Epitaxial silicon
在线阅读:	http://www.sciencedirect.com/science/article/pii/S2666523923001423

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