The Mechanisms of AlGaN Device Buffer Layer Growth and Crystalline Quality Improvement: Restraint of Gallium Residues, Mismatch Stress Relief, and Control of Aluminum Atom Migration Length
The mechanisms of AlGaN device buffer layer growth were studied. Gallium residues in the reactor chamber may be harmful to the quality of the AlN strain modulation layer, which eventually worsens the AlGaN buffer layer. By restraining the gallium residues, the crystalline quality of the AlGaN layer...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-08-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/12/8/1131 |