The Mechanisms of AlGaN Device Buffer Layer Growth and Crystalline Quality Improvement: Restraint of Gallium Residues, Mismatch Stress Relief, and Control of Aluminum Atom Migration Length
The mechanisms of AlGaN device buffer layer growth were studied. Gallium residues in the reactor chamber may be harmful to the quality of the AlN strain modulation layer, which eventually worsens the AlGaN buffer layer. By restraining the gallium residues, the crystalline quality of the AlGaN layer...
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MDPI AG
2022-08-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/12/8/1131 |
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| author | Baibin Wang Jing Yang Degang Zhao Yuheng Zhang Zhenzhuo Zhang Feng Liang Ping Chen Zongshun Liu |
| author_facet | Baibin Wang Jing Yang Degang Zhao Yuheng Zhang Zhenzhuo Zhang Feng Liang Ping Chen Zongshun Liu |
| author_sort | Baibin Wang |
| collection | DOAJ |
| description | The mechanisms of AlGaN device buffer layer growth were studied. Gallium residues in the reactor chamber may be harmful to the quality of the AlN strain modulation layer, which eventually worsens the AlGaN buffer layer. By restraining the gallium residues, the crystalline quality of the AlGaN layer is markedly improved. In addition, enhancing stress relief in nucleation and coalescence stages will reduce the edge dislocations induced by strain relaxation in the 2D growth stage. A slower precursor flow rate can promote the stress relief in nucleation and coalescence stages. By comparison, a suitable suppression of Al atoms’ surface migration can decrease surface roughness, which can be realized by increasing the precursor flow rate. Eventually, we obtained a AlGaN buffer layer having both low edge dislocation density and a flat surface using a two-step growth method. |
| first_indexed | 2024-03-09T04:34:46Z |
| format | Article |
| id | doaj.art-49e3b3636f2d4c85a71bf715a6672fdc |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-09T04:34:46Z |
| publishDate | 2022-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-49e3b3636f2d4c85a71bf715a6672fdc2023-12-03T13:30:15ZengMDPI AGCrystals2073-43522022-08-01128113110.3390/cryst12081131The Mechanisms of AlGaN Device Buffer Layer Growth and Crystalline Quality Improvement: Restraint of Gallium Residues, Mismatch Stress Relief, and Control of Aluminum Atom Migration LengthBaibin Wang0Jing Yang1Degang Zhao2Yuheng Zhang3Zhenzhuo Zhang4Feng Liang5Ping Chen6Zongshun Liu7State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaThe mechanisms of AlGaN device buffer layer growth were studied. Gallium residues in the reactor chamber may be harmful to the quality of the AlN strain modulation layer, which eventually worsens the AlGaN buffer layer. By restraining the gallium residues, the crystalline quality of the AlGaN layer is markedly improved. In addition, enhancing stress relief in nucleation and coalescence stages will reduce the edge dislocations induced by strain relaxation in the 2D growth stage. A slower precursor flow rate can promote the stress relief in nucleation and coalescence stages. By comparison, a suitable suppression of Al atoms’ surface migration can decrease surface roughness, which can be realized by increasing the precursor flow rate. Eventually, we obtained a AlGaN buffer layer having both low edge dislocation density and a flat surface using a two-step growth method.https://www.mdpi.com/2073-4352/12/8/1131AlGaNstress controlaluminum atom migration length |
| spellingShingle | Baibin Wang Jing Yang Degang Zhao Yuheng Zhang Zhenzhuo Zhang Feng Liang Ping Chen Zongshun Liu The Mechanisms of AlGaN Device Buffer Layer Growth and Crystalline Quality Improvement: Restraint of Gallium Residues, Mismatch Stress Relief, and Control of Aluminum Atom Migration Length Crystals AlGaN stress control aluminum atom migration length |
| title | The Mechanisms of AlGaN Device Buffer Layer Growth and Crystalline Quality Improvement: Restraint of Gallium Residues, Mismatch Stress Relief, and Control of Aluminum Atom Migration Length |
| title_full | The Mechanisms of AlGaN Device Buffer Layer Growth and Crystalline Quality Improvement: Restraint of Gallium Residues, Mismatch Stress Relief, and Control of Aluminum Atom Migration Length |
| title_fullStr | The Mechanisms of AlGaN Device Buffer Layer Growth and Crystalline Quality Improvement: Restraint of Gallium Residues, Mismatch Stress Relief, and Control of Aluminum Atom Migration Length |
| title_full_unstemmed | The Mechanisms of AlGaN Device Buffer Layer Growth and Crystalline Quality Improvement: Restraint of Gallium Residues, Mismatch Stress Relief, and Control of Aluminum Atom Migration Length |
| title_short | The Mechanisms of AlGaN Device Buffer Layer Growth and Crystalline Quality Improvement: Restraint of Gallium Residues, Mismatch Stress Relief, and Control of Aluminum Atom Migration Length |
| title_sort | mechanisms of algan device buffer layer growth and crystalline quality improvement restraint of gallium residues mismatch stress relief and control of aluminum atom migration length |
| topic | AlGaN stress control aluminum atom migration length |
| url | https://www.mdpi.com/2073-4352/12/8/1131 |
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