Metal organic chemical vapour deposition regrown large area GaN‐on‐GaN current aperture vertical electron transistors with high current capability
Abstract In this work, a large area current aperture vertical electron transistor (CAVET) is fabricated on bulk GaN substrates grown by metal organic chemical vapour deposition (MOCVD). The current blocking layer (CBL) is formed by low dose Mg‐implantation to allow for MOCVD regrowth under standard...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-02-01
|
| Series: | Electronics Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/ell2.12068 |