Doping Density Extraction of Plasma Treated Metal Oxide Thin Film Diodes by Capacitance–Voltage Analysis
Abstract High quality thin film p‐n junction diodes with high rectification ratios and low ideality factors have been fabricated from metal oxides, such as amorphous oxide semiconductors (AOSs), and characterized. Plasma treatment of interfaces has been demonstrated to improve devices made from AOSs...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2023-06-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202202359 |