Oxygen-Related Reliability of Amorphous InGaZnO Thin Film Transistors
Effects of oxygen flow on positive bias temperature instability and hot carrier injection are investigated in Amorphous InGaZnO (IGZO) thin film transistors. The oxygen flow can suppress the oxygen vacancy density, but introduce shallow states near the conduction edges. The electron can tunnel into...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9089236/ |