Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer

Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer

Structural and electrical characteristics of epitaxial germanium (Ge) heterogeneously integrated on silicon (Si) via a composite, large bandgap AlAs/GaAs buffer are investigated. Electrical characteristics of N-type metal-oxide-semiconductor (MOS) capacitors, fabricated from the aforementioned mater...

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Bibliographic Details
Main Authors: Peter D. Nguyen, Michael Brian Clavel, Patrick S. Goley, Jheng-Sin Liu, Noah P. Allen, Louis J. Guido, Mantu K. Hudait
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Germanium
heteroepitaxy
metal oxide semiconductor (MOS) devices
silicon
III-V materials
Online Access:https://ieeexplore.ieee.org/document/7093118/

Internet

https://ieeexplore.ieee.org/document/7093118/

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