Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer
Structural and electrical characteristics of epitaxial germanium (Ge) heterogeneously integrated on silicon (Si) via a composite, large bandgap AlAs/GaAs buffer are investigated. Electrical characteristics of N-type metal-oxide-semiconductor (MOS) capacitors, fabricated from the aforementioned mater...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2015-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/7093118/ |
| _version_ | 1828969951115870208 |
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| author | Peter D. Nguyen Michael Brian Clavel Patrick S. Goley Jheng-Sin Liu Noah P. Allen Louis J. Guido Mantu K. Hudait |
| author_facet | Peter D. Nguyen Michael Brian Clavel Patrick S. Goley Jheng-Sin Liu Noah P. Allen Louis J. Guido Mantu K. Hudait |
| author_sort | Peter D. Nguyen |
| collection | DOAJ |
| description | Structural and electrical characteristics of epitaxial germanium (Ge) heterogeneously integrated on silicon (Si) via a composite, large bandgap AlAs/GaAs buffer are investigated. Electrical characteristics of N-type metal-oxide-semiconductor (MOS) capacitors, fabricated from the aforementioned material stack are then presented. Simulated and experimental X-ray rocking curves show distinct Ge, AlAs, and GaAs epilayer peaks. Moreover, secondary ion mass spectrometry, energy dispersive X-ray spectroscopy (EDS) profile, and EDS line profile suggest limited interdiffusion of the underlying buffer into the Ge layer, which is further indicative of the successful growth of device-quality epitaxial Ge layer. The Ge MOS capacitor devices demonstrated low frequency dispersion of 1.80% per decade, low frequency-dependent flat-band voltage, VFB, shift of 153 mV, efficient Fermi level movement, and limited C-V stretch out. Low interface state density (Dit) from 8.55 × 10<sup>11</sup> to 1.09 × 10<sup>12</sup> cm<sup>-2</sup> eV<sup>-1</sup> is indicative of a high-quality oxide/Ge heterointerface, an effective electrical passivation of the Ge surface, and a Ge epitaxy with minimal defects. These superior electrical and material characteristics suggest the feasibility of utilizing large bandgap III-V buffers in the heterointegration of high-mobility channel materials on Si for future high-speed complementary metal-oxide semiconductor logic applications. |
| first_indexed | 2024-12-14T12:41:03Z |
| format | Article |
| id | doaj.art-4a636b1e54e24070b98f99e72168d06f |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-14T12:41:03Z |
| publishDate | 2015-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-4a636b1e54e24070b98f99e72168d06f2022-12-21T23:00:54ZengIEEEIEEE Journal of the Electron Devices Society2168-67342015-01-013434134810.1109/JEDS.2015.24259597093118Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs BufferPeter D. Nguyen0Michael Brian Clavel1Patrick S. Goley2Jheng-Sin Liu3Noah P. Allen4Louis J. Guido5Mantu K. Hudait6Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, USADepartment of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, USADepartment of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, USADepartment of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, USADepartment of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, USADepartment of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, USADepartment of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, USAStructural and electrical characteristics of epitaxial germanium (Ge) heterogeneously integrated on silicon (Si) via a composite, large bandgap AlAs/GaAs buffer are investigated. Electrical characteristics of N-type metal-oxide-semiconductor (MOS) capacitors, fabricated from the aforementioned material stack are then presented. Simulated and experimental X-ray rocking curves show distinct Ge, AlAs, and GaAs epilayer peaks. Moreover, secondary ion mass spectrometry, energy dispersive X-ray spectroscopy (EDS) profile, and EDS line profile suggest limited interdiffusion of the underlying buffer into the Ge layer, which is further indicative of the successful growth of device-quality epitaxial Ge layer. The Ge MOS capacitor devices demonstrated low frequency dispersion of 1.80% per decade, low frequency-dependent flat-band voltage, VFB, shift of 153 mV, efficient Fermi level movement, and limited C-V stretch out. Low interface state density (Dit) from 8.55 × 10<sup>11</sup> to 1.09 × 10<sup>12</sup> cm<sup>-2</sup> eV<sup>-1</sup> is indicative of a high-quality oxide/Ge heterointerface, an effective electrical passivation of the Ge surface, and a Ge epitaxy with minimal defects. These superior electrical and material characteristics suggest the feasibility of utilizing large bandgap III-V buffers in the heterointegration of high-mobility channel materials on Si for future high-speed complementary metal-oxide semiconductor logic applications.https://ieeexplore.ieee.org/document/7093118/Germaniumheteroepitaxymetal oxide semiconductor (MOS) devicessiliconIII-V materials |
| spellingShingle | Peter D. Nguyen Michael Brian Clavel Patrick S. Goley Jheng-Sin Liu Noah P. Allen Louis J. Guido Mantu K. Hudait Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer IEEE Journal of the Electron Devices Society Germanium heteroepitaxy metal oxide semiconductor (MOS) devices silicon III-V materials |
| title | Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer |
| title_full | Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer |
| title_fullStr | Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer |
| title_full_unstemmed | Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer |
| title_short | Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer |
| title_sort | heteroepitaxial ge mos devices on si using composite alas gaas buffer |
| topic | Germanium heteroepitaxy metal oxide semiconductor (MOS) devices silicon III-V materials |
| url | https://ieeexplore.ieee.org/document/7093118/ |
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