Al<sub>x</sub>In<sub>1−x</sub>N on Si (100) Solar Cells (x = 0–0.56) Deposited by RF Sputtering

Al<sub>x</sub>In<sub>1−x</sub>N on Si (100) Solar Cells (x = 0–0.56) Deposited by RF Sputtering

We investigate the photovoltaic performance of solar cells based on n-Al<sub>x</sub>In<sub>1−x</sub>N (x = 0–0.56) on p-Si (100) hetero-junctions deposited by radio frequency sputtering. The Al<sub>x</sub>In<sub>1−x</sub>N layers own an optical bandgap...

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Bibliographic Details
Main Authors: Sirona Valdueza-Felip, Rodrigo Blasco, Javier Olea, Alba Díaz-Lobo, Alejandro F. Braña, Fernando B. Naranjo
Format: Article
Language:English
Published: MDPI AG 2020-05-01
Series:Materials
Subjects:
AlInN
silicon
sputtering
solar cells
Online Access:https://www.mdpi.com/1996-1944/13/10/2336

Internet

https://www.mdpi.com/1996-1944/13/10/2336

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