Band gap engineering of Si-Ge alloys for mid-temperature thermoelectric applications
The viability of Si-Ge alloys in thermoelectric applications lies in its high figure-of-merit, non-toxicity and earth-abundance. However, what restricts its wider acceptance is its operation temperature (above 1000 K) which is primarily due to its electronic band gap. By means of density functional...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4916918 |