Accurate evaluation of subband structure in a carrier accumulation layer at an n-type InAs surface: LDF calculation combined with high-resolution photoelectron spectroscopy
Adsorption on an n-type InAs surface often induces a gradual formation of a carrier-accumulation layer at the surface. By means of high-resolution photoelectron spectroscopy (PES), Betti et al. made a systematic observation of subbands in the accumulation layer in the formation process. Incorporatin...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2012-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4768671 |