LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and Verification

LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and Verification

We analytically and numerically investigate the performance of Laterally-Diffused Metal-Oxide-Semiconductor (LDMOS) transistors with Semi-circular Field OXide (S-FOX) focusing on mid-voltage (30 V – 100 V) power applications. We derive an analytical relation between breakdown voltage and...

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Bibliographic Details
Main Authors: Ali Saadat, Maarten L. Van de Put, Hal Edwards, William G. Vandenberghe
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Analytical study
breakdown voltage
drift region
figure-of-merit
LDMOS
on-resistance
Online Access:https://ieeexplore.ieee.org/document/9761987/

Internet

https://ieeexplore.ieee.org/document/9761987/

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