LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and Verification
We analytically and numerically investigate the performance of Laterally-Diffused Metal-Oxide-Semiconductor (LDMOS) transistors with Semi-circular Field OXide (S-FOX) focusing on mid-voltage (30 V – 100 V) power applications. We derive an analytical relation between breakdown voltage and...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2022-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9761987/ |
| _version_ | 1818572245212069888 |
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| author | Ali Saadat Maarten L. Van de Put Hal Edwards William G. Vandenberghe |
| author_facet | Ali Saadat Maarten L. Van de Put Hal Edwards William G. Vandenberghe |
| author_sort | Ali Saadat |
| collection | DOAJ |
| description | We analytically and numerically investigate the performance of Laterally-Diffused Metal-Oxide-Semiconductor (LDMOS) transistors with Semi-circular Field OXide (S-FOX) focusing on mid-voltage (30 V – 100 V) power applications. We derive an analytical relation between breakdown voltage and on-resistance to realize the ideal behavior of the drift region for an LDMOS with S-FOX. Then, we find the optimized drift doping concentration minimizing the on-resistance at a given breakdown voltage. We introduce a new figure-of-merit for the drift region of a lateral device with S-FOX. We finally verify our ideal analytical findings with numerical results modeled and simulated in a commercial Technology Computer-Aided Design (TCAD). |
| first_indexed | 2024-12-14T18:54:31Z |
| format | Article |
| id | doaj.art-4ac0540a27404e2a8e89fe80aa1653aa |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-14T18:54:31Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-4ac0540a27404e2a8e89fe80aa1653aa2022-12-21T22:51:09ZengIEEEIEEE Journal of the Electron Devices Society2168-67342022-01-011036136610.1109/JEDS.2022.31697029761987LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and VerificationAli Saadat0https://orcid.org/0000-0001-8628-0098Maarten L. Van de Put1https://orcid.org/0000-0001-9179-6443Hal Edwards2https://orcid.org/0000-0002-1101-661XWilliam G. Vandenberghe3https://orcid.org/0000-0002-6717-5046Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX, USADepartment of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX, USAAnalog Technology Development, Texas Instruments Inc., Richardson, TX, USADepartment of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX, USAWe analytically and numerically investigate the performance of Laterally-Diffused Metal-Oxide-Semiconductor (LDMOS) transistors with Semi-circular Field OXide (S-FOX) focusing on mid-voltage (30 V – 100 V) power applications. We derive an analytical relation between breakdown voltage and on-resistance to realize the ideal behavior of the drift region for an LDMOS with S-FOX. Then, we find the optimized drift doping concentration minimizing the on-resistance at a given breakdown voltage. We introduce a new figure-of-merit for the drift region of a lateral device with S-FOX. We finally verify our ideal analytical findings with numerical results modeled and simulated in a commercial Technology Computer-Aided Design (TCAD).https://ieeexplore.ieee.org/document/9761987/Analytical studybreakdown voltagedrift regionfigure-of-meritLDMOSon-resistance |
| spellingShingle | Ali Saadat Maarten L. Van de Put Hal Edwards William G. Vandenberghe LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and Verification IEEE Journal of the Electron Devices Society Analytical study breakdown voltage drift region figure-of-merit LDMOS on-resistance |
| title | LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and Verification |
| title_full | LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and Verification |
| title_fullStr | LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and Verification |
| title_full_unstemmed | LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and Verification |
| title_short | LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and Verification |
| title_sort | ldmos drift region with field oxides figure of merit derivation and verification |
| topic | Analytical study breakdown voltage drift region figure-of-merit LDMOS on-resistance |
| url | https://ieeexplore.ieee.org/document/9761987/ |
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