LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and Verification
We analytically and numerically investigate the performance of Laterally-Diffused Metal-Oxide-Semiconductor (LDMOS) transistors with Semi-circular Field OXide (S-FOX) focusing on mid-voltage (30 V – 100 V) power applications. We derive an analytical relation between breakdown voltage and...
Main Authors: | Ali Saadat, Maarten L. Van de Put, Hal Edwards, William G. Vandenberghe |
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Format: | Article |
Language: | English |
Published: |
IEEE
2022-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9761987/ |
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