A Power-Type Single GaN-Based Blue LED With Improved Linearity for 3 Gb/s Free-Space VLC Without Pre-equalization

A new GaN light-emitting diode (LED) structure, which has a 300-nm aluminum-doped zinc oxide transparent current spreading layer epitaxial layer grown on a standard GaN LED epistack used in commercial GaN LED products, shows improved power vs. voltage (P-V) linearity and is suitable for high-data ra...

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Bibliographic Details
Main Authors: Zhenkun Sun, Dongdong Teng, Lilin Liu, Xingxing Huang, Xiangying Zhang, Kun Sun, Yiguang Wang, Nan Chi, Gang Wang
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Photonics Journal
Subjects:
Online Access:https://ieeexplore.ieee.org/document/7470247/