Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N2 remote-plasma treatment

Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N2 remote-plasma treatment

In this work, we demonstrated considerable enhancement of the transport characteristics of n-type Al2O3/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (n-MOSFETs) with the assistance of in situ NH3/N2 remote-plasma (RP) treatment. According to the measurement and simulation result...

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Bibliographic Details
Main Authors: P. Huang, Q. H. Luc, A. Sibaja-Hernandez, C. W. Hsu, J. Y. Wu, H. L. Ko, N. A. Tran, N. Collaert, E. Y. Chang
Format: Article
Language:English
Published: AIP Publishing LLC 2021-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0037378

Internet

http://dx.doi.org/10.1063/5.0037378

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