Effects of phosphorous and antimony doping on thin Ge layers grown on Si

Effects of phosphorous and antimony doping on thin Ge layers grown on Si

Abstract Suppression of threading dislocations (TDs) in thin germanium (Ge) layers grown on silicon (Si) substrates has been critical for realizing high-performance Si-based optoelectronic and electronic devices. An advanced growth strategy is desired to minimize the TD density within a thin Ge buff...

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Bibliographic Details
Main Authors: Xueying Yu, Hui Jia, Junjie Yang, Mateus G. Masteghin, Harvey Beere, Makhayeni Mtunzi, Huiwen Deng, Suguo Huo, Chong Chen, Siming Chen, Mingchu Tang, Stephen J. Sweeney, David Ritchie, Alwyn Seeds, Huiyun Liu
Format: Article
Language:English
Published: Nature Portfolio 2024-04-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-024-57937-8

Internet

https://doi.org/10.1038/s41598-024-57937-8

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