All III‐arsenide low threshold InAs quantum dot lasers on InP(001)

All III‐arsenide low threshold InAs quantum dot lasers on InP(001)

Abstract This study investigates the development of InAs quantum dot (QD) lasers on a InP(001) substrate, utilizing only III‐arsenide layers. This approach avoids the issues associated with the use of phosphorus compounds, which are evident in the crystal growth of conventional C/L‐band QD lasers, m...

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Bibliographic Details
Main Authors: Jinkwan Kwoen, Natália Morais, Wenbo Zhan, Satoshi Iwamoto, Yasuhiko Arakawa
Format: Article
Language:English
Published: Wiley 2023-08-01
Series:Electronics Letters
Subjects:
arsenic compounds
molecular beam epitaxial growth
quantum dot lasers
semiconductor lasers
Online Access:https://doi.org/10.1049/ell2.12920

Internet

https://doi.org/10.1049/ell2.12920

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