All III‐arsenide low threshold InAs quantum dot lasers on InP(001)
Abstract This study investigates the development of InAs quantum dot (QD) lasers on a InP(001) substrate, utilizing only III‐arsenide layers. This approach avoids the issues associated with the use of phosphorus compounds, which are evident in the crystal growth of conventional C/L‐band QD lasers, m...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-08-01
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| Series: | Electronics Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/ell2.12920 |
| Summary: | Abstract This study investigates the development of InAs quantum dot (QD) lasers on a InP(001) substrate, utilizing only III‐arsenide layers. This approach avoids the issues associated with the use of phosphorus compounds, which are evident in the crystal growth of conventional C/L‐band QD lasers, making the manufacturing process safer, simpler, and more cost‐effective. The threshold current density of the fabricated QD laser was 633 A/cm2, which is the lowest value for QD lasers in the 1.6‐µm wavelength region. This result suggests a high cost‐effectiveness and paves the way towards a large‐scale production technology for high‐performing C/L/U‐band QD lasers. |
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| ISSN: | 0013-5194 1350-911X |