PbI2‐DMSO Assisted In Situ Growth of Perovskite Wafers for Sensitive Direct X‐Ray Detection
Abstract Although perovskite wafers with a scalable size and thickness are suitable for direct X‐ray detection, polycrystalline perovskite wafers have drawbacks such as the high defect density, defective grain boundaries, and low crystallinity. Herein, PbI2‐DMSO powders are introduced into the MAPbI...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2023-01-01
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| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202204512 |
| _version_ | 1797962130594463744 |
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| author | Wenjun Liu Tongyu Shi Jiongtao Zhu Zhenyu Zhang Dong Li Xingchen He Xiongsheng Fan Lingqiang Meng Jiahong Wang Rui He Yongshuai Ge Yanliang Liu Paul K. Chu Xue‐Feng Yu |
| author_facet | Wenjun Liu Tongyu Shi Jiongtao Zhu Zhenyu Zhang Dong Li Xingchen He Xiongsheng Fan Lingqiang Meng Jiahong Wang Rui He Yongshuai Ge Yanliang Liu Paul K. Chu Xue‐Feng Yu |
| author_sort | Wenjun Liu |
| collection | DOAJ |
| description | Abstract Although perovskite wafers with a scalable size and thickness are suitable for direct X‐ray detection, polycrystalline perovskite wafers have drawbacks such as the high defect density, defective grain boundaries, and low crystallinity. Herein, PbI2‐DMSO powders are introduced into the MAPbI3 wafer to facilitate crystal growth. The PbI2 powders absorb a certain amount of DMSO to form the PbI2‐DMSO powders and PbI2‐DMSO is converted back into PbI2 under heating while releasing DMSO vapor. During isostatic pressing of the MAPbI3 wafer with the PbI2‐DMSO solid additive, the released DMSO vapor facilitates in situ growth in the MAPbI3 wafer with enhanced crystallinity and reduced defect density. A dense and compact MAPbI3 wafer with a high mobility‐lifetime (µτ) product of 8.70 × 10−4 cm2 V−1 is produced. The MAPbI3‐based direct X‐ray detector fabricated for demonstration shows a high sensitivity of 1.58 × 104 µC Gyair−1 cm−2 and a low detection limit of 410 nGyair s−1. |
| first_indexed | 2024-04-11T01:08:30Z |
| format | Article |
| id | doaj.art-4b6d0b430eaa4b24b329fac0dc9df8c6 |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-04-11T01:08:30Z |
| publishDate | 2023-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-4b6d0b430eaa4b24b329fac0dc9df8c62023-01-04T10:53:44ZengWileyAdvanced Science2198-38442023-01-01101n/an/a10.1002/advs.202204512PbI2‐DMSO Assisted In Situ Growth of Perovskite Wafers for Sensitive Direct X‐Ray DetectionWenjun Liu0Tongyu Shi1Jiongtao Zhu2Zhenyu Zhang3Dong Li4Xingchen He5Xiongsheng Fan6Lingqiang Meng7Jiahong Wang8Rui He9Yongshuai Ge10Yanliang Liu11Paul K. Chu12Xue‐Feng Yu13Materials Interfaces Center Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen Guangdong 518055 ChinaMaterials Interfaces Center Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen Guangdong 518055 ChinaResearch Center for Medical Artificial Intelligence Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen 518055 ChinaMaterials Interfaces Center Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen Guangdong 518055 ChinaMaterials Interfaces Center Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen Guangdong 518055 ChinaMaterials Interfaces Center Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen Guangdong 518055 ChinaMaterials Interfaces Center Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen Guangdong 518055 ChinaMaterials Interfaces Center Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen Guangdong 518055 ChinaMaterials Interfaces Center Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen Guangdong 518055 ChinaMaterials Interfaces Center Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen Guangdong 518055 ChinaUniversity of Chinese Academy of Sciences Beijing 100049 P. R. ChinaMaterials Interfaces Center Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen Guangdong 518055 ChinaDepartment of Physics Department of Materials Science and Engineering and Department of Biomedical Engineering City University of Hong Kong Tat Chee Avenue, Kowloon Hong Kong ChinaMaterials Interfaces Center Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen Guangdong 518055 ChinaAbstract Although perovskite wafers with a scalable size and thickness are suitable for direct X‐ray detection, polycrystalline perovskite wafers have drawbacks such as the high defect density, defective grain boundaries, and low crystallinity. Herein, PbI2‐DMSO powders are introduced into the MAPbI3 wafer to facilitate crystal growth. The PbI2 powders absorb a certain amount of DMSO to form the PbI2‐DMSO powders and PbI2‐DMSO is converted back into PbI2 under heating while releasing DMSO vapor. During isostatic pressing of the MAPbI3 wafer with the PbI2‐DMSO solid additive, the released DMSO vapor facilitates in situ growth in the MAPbI3 wafer with enhanced crystallinity and reduced defect density. A dense and compact MAPbI3 wafer with a high mobility‐lifetime (µτ) product of 8.70 × 10−4 cm2 V−1 is produced. The MAPbI3‐based direct X‐ray detector fabricated for demonstration shows a high sensitivity of 1.58 × 104 µC Gyair−1 cm−2 and a low detection limit of 410 nGyair s−1.https://doi.org/10.1002/advs.202204512defects densityin situ growthPbI2‐DMSOperovskite waferperovskite X‐ray detection |
| spellingShingle | Wenjun Liu Tongyu Shi Jiongtao Zhu Zhenyu Zhang Dong Li Xingchen He Xiongsheng Fan Lingqiang Meng Jiahong Wang Rui He Yongshuai Ge Yanliang Liu Paul K. Chu Xue‐Feng Yu PbI2‐DMSO Assisted In Situ Growth of Perovskite Wafers for Sensitive Direct X‐Ray Detection Advanced Science defects density in situ growth PbI2‐DMSO perovskite wafer perovskite X‐ray detection |
| title | PbI2‐DMSO Assisted In Situ Growth of Perovskite Wafers for Sensitive Direct X‐Ray Detection |
| title_full | PbI2‐DMSO Assisted In Situ Growth of Perovskite Wafers for Sensitive Direct X‐Ray Detection |
| title_fullStr | PbI2‐DMSO Assisted In Situ Growth of Perovskite Wafers for Sensitive Direct X‐Ray Detection |
| title_full_unstemmed | PbI2‐DMSO Assisted In Situ Growth of Perovskite Wafers for Sensitive Direct X‐Ray Detection |
| title_short | PbI2‐DMSO Assisted In Situ Growth of Perovskite Wafers for Sensitive Direct X‐Ray Detection |
| title_sort | pbi2 dmso assisted in situ growth of perovskite wafers for sensitive direct x ray detection |
| topic | defects density in situ growth PbI2‐DMSO perovskite wafer perovskite X‐ray detection |
| url | https://doi.org/10.1002/advs.202204512 |
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