Two-channel microwave power switch construction on the basis of electrically active semiconductor structures
When constructing the fast-acting two-channel microwave switch, it is difficult to use p–i–n-diodes due to inertia of processes in such structures at change of control voltage polarity for providing of deep modulation. Under the practical realization of the microwave switches on p—i—n-diodes, the re...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2014-06-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2014/2-3_2014/pdf/04.pdf |