Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications

Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications

Abstract The fabrication of high‐speed electronic and communication devices has rapidly grown the demand for high mobility semiconductors. However, their high cost and complex fabrication process make them less attractive for the consumer market and industrial applications. Indium nitride (InN) can...

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Bibliographic Details
Main Authors: Ali Imran, Muhammad Sulaman, Muhammad Yousaf, Muhammad Abid Anwar, Muhammad Qasim, Ghulam Dastgeer, Kossi A. A. Min‐Dianey, Baoyu Wang, Xinqiang Wang
Format: Article
Language:English
Published: Wiley-VCH 2023-07-01
Series:Advanced Materials Interfaces
Subjects:
high electron mobility
InN epilayer
low dislocation density
molecular beam epitaxy
Online Access:https://doi.org/10.1002/admi.202200105

Internet

https://doi.org/10.1002/admi.202200105

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