Improved anti-ferroelectric properties enabled by high pressure annealing for eDRAM applications
The non-ideal characteristics at the interfaces of anti-ferroelectric (AFE) film and electrodes will greatly affect the potential performance in the way to embedded dynamic random-access memory applications. In this paper, we have proposed a high-performance AFE TiN/HfxZr1−xO2/TiN capacitor fabricat...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0107292 |