Investigation of Program Efficiency Overshoot in 3D Vertical Channel NAND Flash with Randomly Distributed Traps

Investigation of Program Efficiency Overshoot in 3D Vertical Channel NAND Flash with Randomly Distributed Traps

The incremental step pulse programming slope (ISPP) with random variation was investigated by measuring numerous three−dimensional (3D) NAND flash memory cells with a vertical nanowire channel. We stored multiple bits in a cell with the ISPP scheme and read each cell pulse by pulse. The excessive tu...

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Bibliographic Details
Main Authors: Chanyang Park, Jun-Sik Yoon, Kihoon Nam, Hyundong Jang, Minsang Park, Rock-Hyun Baek
Format: Article
Language:English
Published: MDPI AG 2023-04-01
Series:Nanomaterials
Subjects:
abnormal program cell
charge trap nitride
incremental step pulse programming
Monte−Carlo simulation
over−programming
overshoot
Online Access:https://www.mdpi.com/2079-4991/13/9/1451

Internet

https://www.mdpi.com/2079-4991/13/9/1451

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