Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs

Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs

Abstract In this work, extremely thin silicon-on-insulator field effective transistors (ETSOI FETs) are fabricated with an ultra-thin 3 nm ferroelectric (FE) hafnium zirconium oxides (Hf0.5Zr0.5O2) layer. Furthermore, the subthreshold characteristics of the devices with double gate modulation are in...

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Bibliographic Details
Main Authors: Zhaohao Zhang, Yudong Li, Jing Xu, Bo Tang, Jinjuan Xiang, Junjie Li, Qingzhu Zhang, Zhenhua Wu, Huaxiang Yin, Jun Luo, Wenwu Wang
Format: Article
Language:English
Published: SpringerOpen 2022-12-01
Series:Nanoscale Research Letters
Subjects:
Hf0.5Zr0.5O2
ETSOI
Back gate
Subthreshold swing
Domain switching
Online Access:https://doi.org/10.1186/s11671-022-03767-4

Internet

https://doi.org/10.1186/s11671-022-03767-4

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