About the prospects of silicon field-effect transistor microwave for running a temperature of 450-700 K
Proposed a model of silicon MOS transistor designed for pulsed operation up to T = 550 K. The main feature of the model is an abnormally high level of doping drain region. The estimation of the rate of degradation of the operating parameters of the device. It is shown that the uptime of the device w...
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| Format: | Article |
| Language: | English |
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Povolzhskiy State University of Telecommunications & Informatics
2014-04-01
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| Series: | Физика волновых процессов и радиотехнические системы |
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| Online Access: | https://journals.ssau.ru/pwp/article/viewFile/7257/7118 |