About the prospects of silicon field-effect transistor microwave for running a temperature of 450-700 K
Proposed a model of silicon MOS transistor designed for pulsed operation up to T = 550 K. The main feature of the model is an abnormally high level of doping drain region. The estimation of the rate of degradation of the operating parameters of the device. It is shown that the uptime of the device w...
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| Format: | Article |
| Language: | English |
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Povolzhskiy State University of Telecommunications & Informatics
2014-04-01
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| Series: | Физика волновых процессов и радиотехнические системы |
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| Online Access: | https://journals.ssau.ru/pwp/article/viewFile/7257/7118 |
| _version_ | 1797382641540923392 |
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| author | A.B. Fedotov |
| author_facet | A.B. Fedotov |
| author_sort | A.B. Fedotov |
| collection | DOAJ |
| description | Proposed a model of silicon MOS transistor designed for pulsed operation up to T = 550 K. The main feature of the model is an abnormally high level of doping drain region. The estimation of the rate of degradation of the operating parameters of the device. It is shown that the uptime of the device when the channel length L ~ 600 nm and depth of its location beneath the work surface x_10 500 nm is not less than 1.5 years. Calculations of the degradation performed for T = (600-700) K may be useful in the design of high-temperature devices based on wide bandgap semiconductors. |
| first_indexed | 2024-03-08T21:08:24Z |
| format | Article |
| id | doaj.art-4bed289bd94a4435916a8d1ea3a7283e |
| institution | Directory Open Access Journal |
| issn | 1810-3189 2782-294X |
| language | English |
| last_indexed | 2024-03-08T21:08:24Z |
| publishDate | 2014-04-01 |
| publisher | Povolzhskiy State University of Telecommunications & Informatics |
| record_format | Article |
| series | Физика волновых процессов и радиотехнические системы |
| spelling | doaj.art-4bed289bd94a4435916a8d1ea3a7283e2023-12-22T10:31:37ZengPovolzhskiy State University of Telecommunications & InformaticsФизика волновых процессов и радиотехнические системы1810-31892782-294X2014-04-0117458636826About the prospects of silicon field-effect transistor microwave for running a temperature of 450-700 KA.B. Fedotov0Нижегородский государственный технический университет им. Р.Е. АлексееваProposed a model of silicon MOS transistor designed for pulsed operation up to T = 550 K. The main feature of the model is an abnormally high level of doping drain region. The estimation of the rate of degradation of the operating parameters of the device. It is shown that the uptime of the device when the channel length L ~ 600 nm and depth of its location beneath the work surface x_10 500 nm is not less than 1.5 years. Calculations of the degradation performed for T = (600-700) K may be useful in the design of high-temperature devices based on wide bandgap semiconductors.https://journals.ssau.ru/pwp/article/viewFile/7257/7118silicon field-effect transistor microwavepulsed operationa high level of doping drain regionthe rate of degradation |
| spellingShingle | A.B. Fedotov About the prospects of silicon field-effect transistor microwave for running a temperature of 450-700 K Физика волновых процессов и радиотехнические системы silicon field-effect transistor microwave pulsed operation a high level of doping drain region the rate of degradation |
| title | About the prospects of silicon field-effect transistor microwave for running a temperature of 450-700 K |
| title_full | About the prospects of silicon field-effect transistor microwave for running a temperature of 450-700 K |
| title_fullStr | About the prospects of silicon field-effect transistor microwave for running a temperature of 450-700 K |
| title_full_unstemmed | About the prospects of silicon field-effect transistor microwave for running a temperature of 450-700 K |
| title_short | About the prospects of silicon field-effect transistor microwave for running a temperature of 450-700 K |
| title_sort | about the prospects of silicon field effect transistor microwave for running a temperature of 450 700 k |
| topic | silicon field-effect transistor microwave pulsed operation a high level of doping drain region the rate of degradation |
| url | https://journals.ssau.ru/pwp/article/viewFile/7257/7118 |
| work_keys_str_mv | AT abfedotov abouttheprospectsofsiliconfieldeffecttransistormicrowaveforrunningatemperatureof450700k |