Graphene antidot nanoribbon tunnel field‐effect transistor

Graphene antidot nanoribbon tunnel field‐effect transistor

Abstract A graphene nanoribbon tunnel field‐effect transistor (TFET) model is proposed, in which the antidot pattern is used to generate the heterojunction (HJ) band structure. The intrinsic strain at the HJ interface is absent naturally, greatly avoiding the tunnelling blocking effect of the interf...

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Bibliographic Details
Main Author: Zhixing Xiao
Format: Article
Language:English
Published: Wiley 2022-07-01
Series:Micro & Nano Letters
Subjects:
energy gap
graphene devices
nanopatterning
performance evaluation
tunnel field‐effect transistors
Online Access:https://doi.org/10.1049/mna2.12107

Internet

https://doi.org/10.1049/mna2.12107

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