Thermodynamic Theory of Phase Separation in Nonstoichiometric Si Oxide Films Induced by High-Temperature Anneals
High-temperature anneals of nonstoichiometric Si oxide (SiO<sub>x</sub>, <i>x</i> < 2) films induce phase separation in them, with the formation of composite structures containing amorphous or crystalline Si nanoinclusions embedded in the Si oxide matrix. In this paper, a...
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MDPI AG
2023-07-01
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author | Andrey Sarikov |
author_facet | Andrey Sarikov |
author_sort | Andrey Sarikov |
collection | DOAJ |
description | High-temperature anneals of nonstoichiometric Si oxide (SiO<sub>x</sub>, <i>x</i> < 2) films induce phase separation in them, with the formation of composite structures containing amorphous or crystalline Si nanoinclusions embedded in the Si oxide matrix. In this paper, a thermodynamic theory of the phase separation process in SiO<sub>x</sub> films is proposed. The theory is based on the thermodynamic models addressing various aspects of this process which we previously developed. A review of these models is provided, including: (i) the derivation of the expressions for the Gibbs free energy of Si oxides and Si/Si oxide systems, (ii) the identification of the phase separation driving forces and counteracting mechanisms, and (iii) the crystallization behavior of amorphous Si nanoinclusions in the Si oxide matrix. A general description of the phase separation process is presented. A number of characteristic features of the nano-Si/Si oxide composites formed by SiO<sub>x</sub> decomposition, such as the local separation of Si nanoinclusions surrounded by the Si oxide matrix; the dependence of the amount of separated Si and the equilibrium matrix composition on the initial Si oxide stoichiometry and annealing temperature; and the correlation of the presence of amorphous and crystalline Si nanoinclusions with the presence of SiO<sub>x</sub> (<i>x</i> < 2) and SiO<sub>2</sub> phase, respectively, in the Si oxide matrix, are explained. |
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spelling | doaj.art-4c3ccbe8d31747d4823383c524687af02023-11-19T12:13:41ZengMDPI AGNanomanufacturing2673-687X2023-07-013329331410.3390/nanomanufacturing3030019Thermodynamic Theory of Phase Separation in Nonstoichiometric Si Oxide Films Induced by High-Temperature AnnealsAndrey Sarikov0V. Lashkaryov Institute of Semiconductor Physics NAS Ukraine, 41 Nauky Avenue, 03028 Kyiv, UkraineHigh-temperature anneals of nonstoichiometric Si oxide (SiO<sub>x</sub>, <i>x</i> < 2) films induce phase separation in them, with the formation of composite structures containing amorphous or crystalline Si nanoinclusions embedded in the Si oxide matrix. In this paper, a thermodynamic theory of the phase separation process in SiO<sub>x</sub> films is proposed. The theory is based on the thermodynamic models addressing various aspects of this process which we previously developed. A review of these models is provided, including: (i) the derivation of the expressions for the Gibbs free energy of Si oxides and Si/Si oxide systems, (ii) the identification of the phase separation driving forces and counteracting mechanisms, and (iii) the crystallization behavior of amorphous Si nanoinclusions in the Si oxide matrix. A general description of the phase separation process is presented. A number of characteristic features of the nano-Si/Si oxide composites formed by SiO<sub>x</sub> decomposition, such as the local separation of Si nanoinclusions surrounded by the Si oxide matrix; the dependence of the amount of separated Si and the equilibrium matrix composition on the initial Si oxide stoichiometry and annealing temperature; and the correlation of the presence of amorphous and crystalline Si nanoinclusions with the presence of SiO<sub>x</sub> (<i>x</i> < 2) and SiO<sub>2</sub> phase, respectively, in the Si oxide matrix, are explained.https://www.mdpi.com/2673-687X/3/3/19thermodynamic theoryphase separationnonstoichiometric Si oxideGibbs free energySi nanoparticlespenalty energy |
spellingShingle | Andrey Sarikov Thermodynamic Theory of Phase Separation in Nonstoichiometric Si Oxide Films Induced by High-Temperature Anneals Nanomanufacturing thermodynamic theory phase separation nonstoichiometric Si oxide Gibbs free energy Si nanoparticles penalty energy |
title | Thermodynamic Theory of Phase Separation in Nonstoichiometric Si Oxide Films Induced by High-Temperature Anneals |
title_full | Thermodynamic Theory of Phase Separation in Nonstoichiometric Si Oxide Films Induced by High-Temperature Anneals |
title_fullStr | Thermodynamic Theory of Phase Separation in Nonstoichiometric Si Oxide Films Induced by High-Temperature Anneals |
title_full_unstemmed | Thermodynamic Theory of Phase Separation in Nonstoichiometric Si Oxide Films Induced by High-Temperature Anneals |
title_short | Thermodynamic Theory of Phase Separation in Nonstoichiometric Si Oxide Films Induced by High-Temperature Anneals |
title_sort | thermodynamic theory of phase separation in nonstoichiometric si oxide films induced by high temperature anneals |
topic | thermodynamic theory phase separation nonstoichiometric Si oxide Gibbs free energy Si nanoparticles penalty energy |
url | https://www.mdpi.com/2673-687X/3/3/19 |
work_keys_str_mv | AT andreysarikov thermodynamictheoryofphaseseparationinnonstoichiometricsioxidefilmsinducedbyhightemperatureanneals |