Proposal for Deep-UV Emission from a Near-Infrared AlN/GaN-Based Quantum Cascade Device Using Multiple Photon Up-Conversion

Proposal for Deep-UV Emission from a Near-Infrared AlN/GaN-Based Quantum Cascade Device Using Multiple Photon Up-Conversion

We propose the use of an n-doped periodic AlN/GaN quantum cascade structure for the optical up-conversion of multiple near-infrared (near-IR) photons into deep-ultraviolet (deep-UV) radiation. Without applying an external bias voltage, the active region of such a device will (similar to an un-biased...

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Bibliographic Details
Main Authors: Daniel Hofstetter, David P. Bour, Hans Beck
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Crystals
Subjects:
nitride semiconductors
AlN/GaN superlattice
optical pumping
near-IR absorption
optically induced up-conversion
deep-UV emission
Online Access:https://www.mdpi.com/2073-4352/13/3/494

Internet

https://www.mdpi.com/2073-4352/13/3/494

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