Investigation of wet etching technique for selective patterning of ferroelectric zirconium-doped hafnium oxide thin films for high-frequency electronic applications

Investigation of wet etching technique for selective patterning of ferroelectric zirconium-doped hafnium oxide thin films for high-frequency electronic applications

This paper presents the area-selective wet etching (ASWE) method as a novel approach to have a selective patterning of a 6.8 nm-thick zirconium-doped hafnium oxide (HZO) thin film, to improve the performance of a metal ferroelectric metal (MFM)-like structure. According to the electromagnetic simula...

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Bibliographic Details
Main Authors: Livia Alexandra Dinu, Cosmin Romanitan, Martino Aldrigo, Catalin Parvulescu, Florin Nastase, Silviu Vulpe, Raluca Gavrila, Pericle Varasteanu, Andreea Bianca Serban, Rihem Noumi, Olga M. Ishchenko
Format: Article
Language:English
Published: Elsevier 2023-09-01
Series:Materials & Design
Subjects:
Area-selective wet etching
Ferroelectricity
Zirconium-doped hafnium oxide
X-ray reflectivity
Phase shifter
Online Access:http://www.sciencedirect.com/science/article/pii/S0264127523006093

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http://www.sciencedirect.com/science/article/pii/S0264127523006093

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