Investigation of wet etching technique for selective patterning of ferroelectric zirconium-doped hafnium oxide thin films for high-frequency electronic applications
This paper presents the area-selective wet etching (ASWE) method as a novel approach to have a selective patterning of a 6.8 nm-thick zirconium-doped hafnium oxide (HZO) thin film, to improve the performance of a metal ferroelectric metal (MFM)-like structure. According to the electromagnetic simula...
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-09-01
|
| Series: | Materials & Design |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S0264127523006093 |
| _version_ | 1797671455855476736 |
|---|---|
| author | Livia Alexandra Dinu Cosmin Romanitan Martino Aldrigo Catalin Parvulescu Florin Nastase Silviu Vulpe Raluca Gavrila Pericle Varasteanu Andreea Bianca Serban Rihem Noumi Olga M. Ishchenko |
| author_facet | Livia Alexandra Dinu Cosmin Romanitan Martino Aldrigo Catalin Parvulescu Florin Nastase Silviu Vulpe Raluca Gavrila Pericle Varasteanu Andreea Bianca Serban Rihem Noumi Olga M. Ishchenko |
| author_sort | Livia Alexandra Dinu |
| collection | DOAJ |
| description | This paper presents the area-selective wet etching (ASWE) method as a novel approach to have a selective patterning of a 6.8 nm-thick zirconium-doped hafnium oxide (HZO) thin film, to improve the performance of a metal ferroelectric metal (MFM)-like structure. According to the electromagnetic simulations of microwave phase shifters with patterned HZO thin films, it is underlined the importance to have selectively targeted areas covered with HZO instead of full-coverage wafers, to gain a further increase in the microwave performance of low-voltage tunable high-frequency components. The impact of the ASWE method on the morpho-structural properties was studied using various investigation tools in a non-destructive manner. X-ray reflectivity (XRR) has been employed at different immersion times, up to 120 s. Based on the extended Fast Fourier Transform (FFT) analysis, as well as from the simulation of the experimental curves in the framework of parallel-tempering algorithm, the determination of the etching rate became possible. X-ray diffraction (XRD), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) clearly indicated the complete removal of HZO after etching processes at 180 s. The method is fast, reliable, and low-cost, thus filling the actual gap in providing the necessary ferroelectric thin films exclusively in selected areas of interest. |
| first_indexed | 2024-03-11T21:15:48Z |
| format | Article |
| id | doaj.art-4c4b4e22e62d4ed294fd9025c33b4608 |
| institution | Directory Open Access Journal |
| issn | 0264-1275 |
| language | English |
| last_indexed | 2024-03-11T21:15:48Z |
| publishDate | 2023-09-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Materials & Design |
| spelling | doaj.art-4c4b4e22e62d4ed294fd9025c33b46082023-09-29T04:43:18ZengElsevierMaterials & Design0264-12752023-09-01233112194Investigation of wet etching technique for selective patterning of ferroelectric zirconium-doped hafnium oxide thin films for high-frequency electronic applicationsLivia Alexandra Dinu0Cosmin Romanitan1Martino Aldrigo2Catalin Parvulescu3Florin Nastase4Silviu Vulpe5Raluca Gavrila6Pericle Varasteanu7Andreea Bianca Serban8Rihem Noumi9Olga M. Ishchenko10National Institute for Research and Development in Microtechnologies, 126A Erou Iancu Nicolae Street, 077190 Voluntari (Ilfov), RomaniaNational Institute for Research and Development in Microtechnologies, 126A Erou Iancu Nicolae Street, 077190 Voluntari (Ilfov), RomaniaNational Institute for Research and Development in Microtechnologies, 126A Erou Iancu Nicolae Street, 077190 Voluntari (Ilfov), Romania; Corresponding author.National Institute for Research and Development in Microtechnologies, 126A Erou Iancu Nicolae Street, 077190 Voluntari (Ilfov), RomaniaNational Institute for Research and Development in Microtechnologies, 126A Erou Iancu Nicolae Street, 077190 Voluntari (Ilfov), RomaniaNational Institute for Research and Development in Microtechnologies, 126A Erou Iancu Nicolae Street, 077190 Voluntari (Ilfov), RomaniaNational Institute for Research and Development in Microtechnologies, 126A Erou Iancu Nicolae Street, 077190 Voluntari (Ilfov), RomaniaNational Institute for Research and Development in Microtechnologies, 126A Erou Iancu Nicolae Street, 077190 Voluntari (Ilfov), RomaniaExtreme Light Infrastructure-Nuclear Physics (ELI-NP), ‘Horia Hulubei’ National R&D Institute for Physics and Nuclear Engineering (IFIN-HH), 30 Reactorului Street, 077125 Măgurele, Ilfov, RomaniaTE-OX, Parc Orsay Université, 21 Rue Jean Rostand, 91400 Orsay Cedex, FranceTE-OX, Parc Orsay Université, 21 Rue Jean Rostand, 91400 Orsay Cedex, FranceThis paper presents the area-selective wet etching (ASWE) method as a novel approach to have a selective patterning of a 6.8 nm-thick zirconium-doped hafnium oxide (HZO) thin film, to improve the performance of a metal ferroelectric metal (MFM)-like structure. According to the electromagnetic simulations of microwave phase shifters with patterned HZO thin films, it is underlined the importance to have selectively targeted areas covered with HZO instead of full-coverage wafers, to gain a further increase in the microwave performance of low-voltage tunable high-frequency components. The impact of the ASWE method on the morpho-structural properties was studied using various investigation tools in a non-destructive manner. X-ray reflectivity (XRR) has been employed at different immersion times, up to 120 s. Based on the extended Fast Fourier Transform (FFT) analysis, as well as from the simulation of the experimental curves in the framework of parallel-tempering algorithm, the determination of the etching rate became possible. X-ray diffraction (XRD), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) clearly indicated the complete removal of HZO after etching processes at 180 s. The method is fast, reliable, and low-cost, thus filling the actual gap in providing the necessary ferroelectric thin films exclusively in selected areas of interest.http://www.sciencedirect.com/science/article/pii/S0264127523006093Area-selective wet etchingFerroelectricityZirconium-doped hafnium oxideX-ray reflectivityPhase shifter |
| spellingShingle | Livia Alexandra Dinu Cosmin Romanitan Martino Aldrigo Catalin Parvulescu Florin Nastase Silviu Vulpe Raluca Gavrila Pericle Varasteanu Andreea Bianca Serban Rihem Noumi Olga M. Ishchenko Investigation of wet etching technique for selective patterning of ferroelectric zirconium-doped hafnium oxide thin films for high-frequency electronic applications Materials & Design Area-selective wet etching Ferroelectricity Zirconium-doped hafnium oxide X-ray reflectivity Phase shifter |
| title | Investigation of wet etching technique for selective patterning of ferroelectric zirconium-doped hafnium oxide thin films for high-frequency electronic applications |
| title_full | Investigation of wet etching technique for selective patterning of ferroelectric zirconium-doped hafnium oxide thin films for high-frequency electronic applications |
| title_fullStr | Investigation of wet etching technique for selective patterning of ferroelectric zirconium-doped hafnium oxide thin films for high-frequency electronic applications |
| title_full_unstemmed | Investigation of wet etching technique for selective patterning of ferroelectric zirconium-doped hafnium oxide thin films for high-frequency electronic applications |
| title_short | Investigation of wet etching technique for selective patterning of ferroelectric zirconium-doped hafnium oxide thin films for high-frequency electronic applications |
| title_sort | investigation of wet etching technique for selective patterning of ferroelectric zirconium doped hafnium oxide thin films for high frequency electronic applications |
| topic | Area-selective wet etching Ferroelectricity Zirconium-doped hafnium oxide X-ray reflectivity Phase shifter |
| url | http://www.sciencedirect.com/science/article/pii/S0264127523006093 |
| work_keys_str_mv | AT liviaalexandradinu investigationofwetetchingtechniqueforselectivepatterningofferroelectriczirconiumdopedhafniumoxidethinfilmsforhighfrequencyelectronicapplications AT cosminromanitan investigationofwetetchingtechniqueforselectivepatterningofferroelectriczirconiumdopedhafniumoxidethinfilmsforhighfrequencyelectronicapplications AT martinoaldrigo investigationofwetetchingtechniqueforselectivepatterningofferroelectriczirconiumdopedhafniumoxidethinfilmsforhighfrequencyelectronicapplications AT catalinparvulescu investigationofwetetchingtechniqueforselectivepatterningofferroelectriczirconiumdopedhafniumoxidethinfilmsforhighfrequencyelectronicapplications AT florinnastase investigationofwetetchingtechniqueforselectivepatterningofferroelectriczirconiumdopedhafniumoxidethinfilmsforhighfrequencyelectronicapplications AT silviuvulpe investigationofwetetchingtechniqueforselectivepatterningofferroelectriczirconiumdopedhafniumoxidethinfilmsforhighfrequencyelectronicapplications AT ralucagavrila investigationofwetetchingtechniqueforselectivepatterningofferroelectriczirconiumdopedhafniumoxidethinfilmsforhighfrequencyelectronicapplications AT periclevarasteanu investigationofwetetchingtechniqueforselectivepatterningofferroelectriczirconiumdopedhafniumoxidethinfilmsforhighfrequencyelectronicapplications AT andreeabiancaserban investigationofwetetchingtechniqueforselectivepatterningofferroelectriczirconiumdopedhafniumoxidethinfilmsforhighfrequencyelectronicapplications AT rihemnoumi investigationofwetetchingtechniqueforselectivepatterningofferroelectriczirconiumdopedhafniumoxidethinfilmsforhighfrequencyelectronicapplications AT olgamishchenko investigationofwetetchingtechniqueforselectivepatterningofferroelectriczirconiumdopedhafniumoxidethinfilmsforhighfrequencyelectronicapplications |