Accurate characterization of organic thin film transistors in the presence of gate leakage current
The presence of gate leakage through polymer dielectric in organic thin film transistors (OTFT) prevents accurate estimation of transistor characteristics especially in subthreshold regime. To mitigate the impact of gate leakage on transfer characteristics and allow accurate estimation of mobility,...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2011-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.3657786 |